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PD - 95315B
IRFR3504PbF
Features
Advanced Process Technology
Ultra Low On-Resistance
IRFU3504PbF
HEXFET ? Power MOSFET
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This HEXFET? Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this product are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
G
D
S
D-Pak
IRFR3504PbF
Max.
V DSS = 40V
R DS(on) = 9.2m ?
I D = 30A
I-Pak
IRFU3504PbF
Units
I D @ T C
= 25°C
Continuous Drain Current, V GS @ 10V (Silicon limited)
87
I D @ T C
I D @ T C
I DM
P D @T C
V GS
E AS
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V GS @ 10V (See Fig.9)
Continuous Drain Current, V GS @ 10V (Package limited)
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
61
30
350
140
0.92
± 20
240
A
W
W/°C
V
mJ
E AS (tested)
Single Pulse Avalanche Energy Tested Value ?
480
I AR
Avalanche Current ?
See Fig.12a, 12b, 15, 16
A
E AR
T J
T STG
Repetitive Avalanche Energy ?
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.09
R θ JA
R θ JA
Junction-to-Ambient (PCB mount) ?
Junction-to-Ambient
–––
–––
50
110
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
09/21/10
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